A numerical device simulator for nanoscale carbon nanotube transistors
نویسندگان
چکیده
An efficient and reliable numerical simulator for carbon nanotube field effect transistors suitable for device optimization and compact model development is presented. The simulator is based on a Schrödinger-Poisson solver and an efficient adaptive integration scheme for the charge and the current along the nanotube. While suitable error estimators for adaptive integration are studied extensively in literature, we present a peak detection enhanced adaptive integration scheme leading to stable and fast simulations.
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